Method of forming a metal line in a semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorMyeong-Cheol Kim
Life of this patent
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Abstract
A preferred method of forming a metal line in a semiconductor memory device includes depositing first, second, and third metal layers on a semiconductor substrate. A fourth layer is deposited on the third metal layer. The fourth layer is etched to form a hard mask. A first cleaning process is performed using a first cleaning agent, a second cleaning agent, or both. The third metal layer is etched according to the hard mask. A second cleaning process is performed using the first cleaning agent or the first and second cleaning agents. The first and second metal layers are etched simultaneously according to the hard mask. A third cleaning process is performed using the second cleaning agent.
Claims20
A method of forming a metal line in a semiconductor memory device, said method comprising:
- depositing a first, second, and third metal layer on a semiconductor substrate;
- depositing a fourth layer on the third metal layer;
- etching the fourth layer to form a hard mask;
- performing a first cleaning process using a first cleaning agent, a second cleaning agent, or both first and second cleaning agents;
- etching the third metal layer according to the hard mask;
- performing a second cleaning process using the first cleaning agent;
- etching the first and second metal layers concurrently according to the hard mask;
- and
- performing a third cleaning process using the second cleaning agent.
A method of forming a metal line in a semiconductor memory device, said method comprising:
- sequentially depositing first, second, and third metal layers on a semiconductor substrate;
- depositing a fourth layer on the third metal layer;
- etching the fourth layer to form a hard mask;
- performing a first cleaning process using a first or second cleaning agent, or both;
- etching the third metal layer according to the hard mask;
- and
- performing a second cleaning process using the first cleaning agent.
Dependencies are inferred from the claim text.