Radical-assisted sequential CVD
AssigneeGenus, Inc.
InventorOfer Sneh
Life of this patent
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Abstract
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Claims3
A method for depositing metal on a substrate in a deposition chamber, comprising the steps of:
- (a) depositing a layer of metal by flowing a precursor bearing the metal over a surface of the substrate prepared for chemical reactivity with the precursor;
- (b) flowing one or more radicalized species, conditioning the layer deposited in step (a) for chemical reactivity with the precursor;
- and
- (c) alternatively flowing the precursor bearing the metal and the radicalized species to build a metal film.
Dependencies are inferred from the claim text.