Method for fabricating semiconductor device

Abstract

The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film 14 on a semiconductor substrate 10; forming a semiconductor layer 22 containing boron on the gate insulation film 14; forming a silicon nitride film 28 having an Si—H bond concentration in the film immediately after deposited which is below 4.3×1020 cm−3 measured by FT-IR; and patterning the silicon nitride film 28 and the semiconductor layer 22 to form a gate electrode 30 of a semiconductor layer 22 having the upper surface covered by the silicon nitride film 28. Whereby the release of hydrogen in the films in the thermal processing after the silicon nitride film has been formed can be decreased, and the boron penetration from the p-type gate electrode 30p can be suppressed.

Dependencies are inferred from the claim text.