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US 6,602,770 B2Granted
Silicon layer to improve plug filling by CVD
AssigneeApplied Materials, Inc.
InventorsSandeep A. Desai, Scott Brad Herner, Steve G. Ghanayem
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Abstract
A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.
Claims21
A method of forming an electrically conductive plug in an opening in a substrate, comprising the sequential steps of:
- providing a substrate having a layer of dielectric that includes an opening laterally bounded by a side wall;
- thermally decomposing silane so as to deposit a layer of material on the side wall of the opening;
- and
- depositing electrically conductive material so as to fill the opening.
1 more element
A method of forming an electrically conductive plug in an opening in a substrate, comprising the sequential steps of:
- providing a substrate having a layer of dielectric that includes an opening laterally bounded by a side wall;
- thermally decomposing silane so as to deposit a layer of material covering the side wall of the opening;
- and
- depositing electrically conductive material so as to fill the opening.
1 more element
Dependencies are inferred from the claim text.