Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
AssigneeCanon Kabushiki Kaisha
InventorsShoji Nishida, Katsumi Nakagawa, Takao Yonehara, Kiyofumi Sakaguchi
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Abstract
A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.
Claims21
A method for transferring a porous layer comprising:
- forming a porous layer on one side of a crystalline silicon member by anodization;
- fixing a supporting substrate onto the surface of the porous layer;
- said supporting substrate comprising metallurgical-grade silicon;
- and
- applying force to at least the supporting substrate or the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate.
A method for transferring a porous layer according to claim 9, wherein the first porous sublayer and the second porous sublayer are formed under different anodization conditions.
A method for making a semiconductor device comprising:
- forming a porous layer on one side of a crystalline silicon member by anodization;
- fixing a supporting substrate onto the surface of the porous layer;
- applying force to at least the supporting substrate or the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate;
- and
- forming a crystalline semiconductor layer onto the transferred porous layer.
A method for making a solar battery comprising:
- forming a porous layer on one side of a crystalline silicon member by anodization;
- fixing a supporting substrate onto the surface of the porous layer;
- applying force to at least the supporting substrate or the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate;
- and
- forming a crystalline semiconductor layer onto the transferred porous layer.
Dependencies are inferred from the claim text.