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US 6,602,765 B2Granted
Fabrication method of thin-film semiconductor device
AssigneeSeiko Epson Corporation
InventorsHiroaki Jiroku, Mitsutoshi Miyasaka, Hidetada Tokioka, Tetsuya Ogawa
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Abstract
An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.
Claims36
A method of fabricating a thin-film semiconductor device, comprising processes of:
- providing a heating system on a substrate, the heating system being formed in island shape;
- forming an active semiconductor layer over said heating system;
- heating said heating system, whereby said heating system locally overheats said active semiconductor layer so as to crystallize said active semiconductor layer;
- and
- patterning said crystallized active semiconductor layer, which forms an active region of said semiconductor layer into insular shape.
2 more elements
Dependencies are inferred from the claim text.