US 6,602,756 B2 · Semiconductor device and its manufacture

Abstract

A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

Claims19

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

(a) forming a lower electrode made of rare metal above a semiconductor substrate;
(b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode;
(c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an overlying layer comprising an adhesive layer directly formed on the upper electrode layer;
(d) after said step of forming the laminated layer, patterning the laminated layer;
(e) after said step of patterning the laminated layer, chemically processing the patterned, laminated layer to remove a surface layer of the overlying layer;
and
(f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, overlying layer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and its manufacture

Life of this patent

Semiconductor device and its manufacture

Life of this patent

Abstract

Claims19