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US 6,602,753 B2Granted
Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasato Koyama, Akira Nishiyama
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Abstract
There is disclosed a method of manufacturing a semiconductor device, wherein a thin film containing a metal and capable of bonding with oxygen is deposited on a silicon substrate, a metal oxide film is formed on the thin film, and the thin film is oxidized by heat treatment to form a gate insulating film comprising the oxidized thin film and the metal oxide film.
Claims22
A method of manufacturing a semiconductor device, comprising:
- removing an oxide film formed on a surface of a silicon substrate;
- forming a buffer layer on said silicon substrate by sputtering using a titanium oxide as a target under an oxygen gas flow rate ranging from 0 sccm to 1.2 sccm, said buffer layer having a thickness of 2 nm or less and comprising an oxide containing titanium and silicon with an atomic percentage of said titanium being in the range of 1 to 8%;
- and
- forming a gate insulating film comprising a titanium oxide on said buffer layer by sputtering using a titanium oxide as a target under an oxygen gas flow rate of not less than 10 sccm.
1 more element
A semiconductor device, comprising:
- a silicon substrate;
- a buffer layer formed on said silicon substrate, said buffer layer having a thickness of 2 nm or less and comprising an oxide containing titanium and silicon with an atomic percentage of said titanium being in the range of 1 to 8%;
- a gate insulating film containing titanium oxide and formed on said buffer layer;
- a gate electrode formed on said gate insulating film;
- and
- source and drain regions formed in said silicon substrate.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- depositing a thin film containing a first metal oxide capable of bonding with oxygen over silicon substrate in an atmosphere which is substantially free from oxygen;
- forming a second metal oxide film on said thin film is formed in an atmosphere containing oxygen;
- and
- oxidizing said thin film by heat treatment to form a gate insulating film comprising said oxidized thin film and said second metal oxide film.
1 more element
A method of manufacturing a semiconductor device, comprising:
- depositing a thin film containing a metal nitride over a silicon substrate,
- forming a metal oxide film on said thin film;
- and
- oxidizing said thin film by heat treatment to form a gate insulating film comprising said oxidized thin film and said metal oxide film.
1 more element
Dependencies are inferred from the claim text.