Method for generating a proximity model based on proximity rules
AssigneeInternational Business Machines Corporation
InventorsLars W. Liebmann, Scott Mansfield, Alfred K. Wong
Life of this patent
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Abstract
A method for generating an optical proximity correction (OPC) model includes generating a set of correction rules for a wafer design containing at least one of lines and assist features, determining a set of corrections that need to be made over a range of sizes and spaces of the lines and assist features based on the set of correction rules, and creating an optical proximity correction model for correcting the wafer design based on the set of corrections.
Claims13
A method for generating an optical proximity correction (OPC) model, comprising:
- (a) transferring at least one mask test pattern onto a wafer test pattern at a first focus and dose;
- (b) measuring size data for the at least one wafer test pattern, said size data corresponding to a reference line size and reference spacing on said mask test pattern;
- (c) providing a set of correction rules based on a product design grid for at least one additional reference line size and for at least one additional reference spacing;
- (d) creating a model calibration table from said set of correction rules, said model calibration table including second line size and second spacing at a second focus and dose corresponding to said size data in accordance with said set of correction rules;
- and
- (e) calibrating an OPC model based on said model calibration table.
A method for generating an OPC model, comprising:
- (a) providing a set of optical proximity correction (OPC) rules based on a product design grid;
- (b) creating a model calibration table based on said set of OPC rules;
- and
- (c) calibrating an OPC model based on said model calibration table.
Dependencies are inferred from the claim text.