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US 6,602,722 B2Granted
Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
AssigneeNEC Corporation
InventorsIchiro Yamamoto, Toshihiro Iizuka, Yoshitake Kato
Life of this patent
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Abstract
A barium strontium titanate is the ferroelectric substance with the perovskite structure available for a capacitor as a dielectric layer, and is crystallized through a high temperature heat treatment, in which the barium strontium titanate is further subjected to a low temperature heat treatment under the crystallizing temperature of the barium strontium titanate for eliminating impurities such as carbon and hydrogen therefrom so that the leakage current is drastically reduced.
Claims16
A process for fabricating a capacitor, comprising the steps of:
- a) preparing semiconductor structure having a semiconductor substrate;
- b) forming a first electrode on said semiconductor structure;
- c) depositing ferroelectric complex oxide expressed as ABO3on said lower electrode;
- d) completing a capacitor through a high temperature heat treatment for crystallizing said ferroelectric complex oxide, and a low temperature heat treatment for eliminating impurities causative of degradation from said ferroelectric complex oxide, wherein said high temperature heat treatment and said low temperature heat treatment are conducted in an inert, low oxygen atmosphere, in which the oxygen concentration ranges from 0 to 5 percent;
- e) repeating said high temperature heat treatment and said low temperature heat treatment;
- and
- f) forming a second electrode on said ferroelectric complex oxide.
4 more elements
A process for fabricating a capacitor, comprising the steps of:
- a) preparing semiconductor structure having a semiconductor substrate;
- b) forming a first electrode on said semiconductor structure;
- c) depositing a ferroelectric complex oxide expressed as ABO3on said lower electrode;
- and
- d) completing a capacitor by conducting a low temperature heat treatment for eliminating impurities causative of degradation from said ferroelectric complex oxide and then in the next step conducting a high temperature heat treatment for crystallizing said ferroelectric complex oxide in a temperature range for crystallizing said ferroelectric complex and finally forming a second electrode on said ferroelectric complex said low temperature heat treatment being conducted at a temperature lower than the high temperature heat treatment, wherein said high temperature heat treatment and said low temperature heat treatment are conducted in an inert, low oxygen atmosphere, in which the oxygen concentration ranges from 0 to 5 percent.
2 more elements
A process for fabricating a capacitor, comprising the steps of:
- a) preparing semiconductor structure having a semiconductor substrate;
- b) forming a first electrode on said semiconductor structure;
- c) depositing ferroelectric complex oxide expressed as ABO3on said lower electrode;
- and
- d) completing a capacitor by conducting a high temperature heat treatment for crystallizing said ferroelectric complex oxide in a temperature range for crystallizing said ferroelectric complex oxide, and then in the next step conducting a low temperature heat treatment for eliminating impurities causative of degradation from said ferroelectric complex oxide at a temperature range below that of the high temperature heat treatment, and finally forming a second electrode on said ferroelectric complex, wherein said high temperature heat treatment and said low temperature heat treatment are conducted in an inert, low oxygen atmosphere, in which the oxygen concentration ranges from 0 to 5 percent.
2 more elements
A process for fabricating a capacitor, comprising the steps of:
- a) preparing semiconductor structure having a semiconductor substrate;
- b) forming a first electrode on said semiconductor structure;
- c) depositing a ferroelectric complex oxide expressed as ABO3on said lower electrode;
- and
- d) first forming a second electrode, then conducting a high temperature heat treatment for crystallizing said ferroelectric complex oxide in a temperature range in a temperature range for crystallizing said ferroelectric complex oxide, and conducting a low temperature heat treatment for eliminating impurities causative of degradation from said ferroelectric complex oxide at a temperature range lower than the high temperature heat treatment, wherein said high temperature heat treatment and said low temperature heat treatment are conducted in an inert, low oxygen atmosphere, in which the oxygen concentration ranges from about 0 to 5 percent.
2 more elements
Dependencies are inferred from the claim text.