Method for fabricating ferroelectric memory device and method for fabricating the same

A method for fabricating a ferroelectric memory device, the method comprising:

• a first step of forming a lower-electrode forming film on a semiconductor substrate and patterning the formed lower-electrode forming film to form a plurality of lower electrodes therefrom, each of the lower electrodes having a plane configuration in which the distance from an arbitrary position on an upper surface thereof to a nearest end portion thereof is about 0.6 μm or less;
• a second step of depositing a burying insulating film over an entire surface of the semiconductor substrate such that the lower electrodes are covered with the burying insulating film;
• a third step of performing polishing with respect to the burying insulating film by chemical mechanical polishing till the lower electrodes are exposed;
• a fourth step of performing over-polishing with respect to the exposed plurality of lower electrodes and to the burying insulating film by positively utilizing the erosion phenomenon, to planarize respective upper surfaces of the lower electrodes and of the burying insulating film;
• a fifth step of forming a capacitor-insulating-film forming film made of a ferroelectric material over the planarized lower electrodes and burying insulating film;
• a sixth step of forming an upper-electrode forming film on the capacitor-insulating-film forming film;
• a seventh step of patterning the capacitor-insulating-film forming film to form a plurality of capacitor insulating films therefrom, the capacitor insulating films being opposed to the respective lower electrodes;
• and
• an eight steps of patterning the upper-electrode forming film to form a plurality of upper electrodes therefrom, the upper electrodes being opposed to the respective capacitor insulating films.