Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same
AssigneeSharp Laboratories of America, Inc.
InventorsSheng Teng Hsu, Fengyan Zhang
Life of this patent
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Abstract
A ferroelectric transistor gate structure with a ferroelectric gate and a high-k insulator is provided. The high-k insulator may serve as both a gate dielectric and an insulator to reduce, or eliminate, the diffusion of oxygen or hydrogen into the ferroelectric gate. A method of forming the ferroelectric gate structure is also provided. The method comprises the steps of forming a sacrificial gate structure, removing the sacrificial gate structure, depositing a high-k insulator, depositing a ferroelectric material, polishing the ferroelectric material using CMP, and forming a top electrode overlying the ferroelectric material.
Claims11
A method of fanning a ferroelectric transistor structure on a substrate comprising the steps of:
- a) depositing and patterning a layer of sacrificial gate material, whereby a sacrificial gate is formed;
- forming an oxide overlying the sacrificial gate;
- and polishing the oxide to expose the sacrificial gate;
- b) removing the sacrificial gate structure to form an open gate region;
- c) depositing a high-k material over the substrate, partially filing the open gate region, whereby the remaining depth of the open gate region is left open;
- and
- d) depositing a ferroelectric material over the high-k material to a thickness greater than the remaining depth of the open gate region.
Dependencies are inferred from the claim text.