Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures

A liquid delivery metal-organic chemical vapor deposition process for forming an indium/copper alloy on a substrate, comprising:

• providing a liquid precursor composition including an indium precursor of the formula:
• R1R2InL
• wherein:
• R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C1-C6 fluoroalkyl or C1-C6 perfluoroalkyl;
• and
• L is β-diketonato or carboxylate;
• flash vaporizing the precursor to form a precursor vapor;
• transporting the precursor vapor to a sub-atmospheric pressure chemical vapor deposition reactor containing a substrate element having copper thereon;
• contacting the precursor vapor with the substrate element in the chemical vapor deposition reactor under sub-atmospheric pressure chemical vapor deposition conditions, to form an indium/copper alloy on the substrate element, wherein said sub-atmospheric pressure chemical vapor deposition reactor is maintained at a pressure that is less than 760 Torr and above about 0.1 Torr.

A liquid delivery metal-organic chemical vapor deposition process for forming an In-containing film on a substrate, comprising:

• providing a liquid precursor composition including an indium precursor of the formula:
• R1R2InL
• wherein:
• R1 and R2 may be same or different and are independently selected from C1-C6 fluoroalkyl and C1-C6 perfluoroalkyl;
• and
• L is β-diketonato or carboxylate;
• flash vaporizing the precursor to form a precursor vapor;
• transporting the precursor vapor to a sub-atmospheric pressure chemical vapor deposition reactor containing a substrate element;
• contacting the precursor vapor with the substrate element in the chemical vapor deposition reactor under sub-atmospheric pressure chemical vapor deposition conditions, to form an In-containing film on the substrate element, wherein said sub-atmospheric pressure is above about 0.1 Torr.