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US 6,602,432 B2Granted
Electroabsorption modulator, and fabricating method of the same
AssigneeKabushiki Kaisha Toshiba
InventorTakayuki Matsuyama
Life of this patent
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Abstract
A high-speed operation of an electroabsorption modulator is intended. A p-InGaAs contact layer 9 is formed not only in an optical modulation region MA but also in an optical coupling region CA, and an AlInAs oxide layer 7 is disposed in p-InP cladding layers 5 and 8 in a mesa MS portion of the optical coupling region CA.
Claims8
An electroabsorption modulator, comprising:
- a first conductivity type cladding layer formed on a first conductivity type substrate;
- an optical absorption layer formed on the first conductivity type cladding layer;
- a second conductivity type cladding layer formed on the optical absorption layer;
- a contact layer formed on the second conductivity type cladding layer;
- and
- a high resistance layer partially formed in a region in an optical propagation direction of the second conductivity type cladding layer.
3 more elements
An electroabsorption modulator, comprising:
- a first conductivity type cladding layer formed on a first conductivity type substrate;
- an optical absorption layer formed on the first conductivity type cladding layer;
- an optical waveguide layer that is formed on the first conductivity type cladding layer so as to optically couple with the optical absorption layer and has a stripe width larger than that of the optical absorption layer;
- a second conductivity type cladding layer formed on the optical absorption layer and the optical waveguide layer;
- a contact layer formed on the second conductivity type cladding layer;
- and
- a proton implanted layer obliquely formed on the second conductivity type cladding layer.
4 more elements
An electroabsorption modulator:
- wherein a shielding region, which shields an electric field applied through a contact layer to an optical absorption layer or an optical guide layer, is partially formed in a cladding layer on the optical absorption layer or the optical waveguide layer.
A fabricating method of an electroabsorption modulator, comprising:
- forming a first conductivity type cladding layer on a first conductivity type substrate;
- forming an optical absorption layer on the first conductivity type cladding layer;
- forming an optical waveguide layer, which is optically coupled with the optical absorption layer, on the first conductivity type cladding layer;
- forming a second conductivity type cladding layer on the optical absorption layer and the optical waveguide layer;
- forming an oxidizable semiconductor layer in a region corresponding to on the optical waveguide layer in the second conductivity type cladding layer;
- forming a contact layer on the second conductivity type cladding layer;
- etching the contact layer, the second conductivity type cladding layer, the oxidizable semiconductor layer, the optical absorption layer and the optical waveguide layer, in stripes;
- and
- oxidizing the oxidizable semiconductor layer from a sidewall of the stripe.
6 more elements
A fabricating method of an electroabsorption modulator, comprising:
- forming a first conductivity type cladding layer on a first conductivity type substrate;
- forming an optical absorption layer on the first conductivity type cladding layer;
- forming an optical waveguide layer, which is optically coupled with the optical absorption layer, on the first conductivity type cladding layer;
- forming a second conductivity type cladding layer on the optical absorption layer and the optical waveguide layer;
- forming a contact layer on the second conductivity type cladding layer;
- etching the contact layer, the second conductivity type cladding layer, the optical absorption layer and the optical waveguide layer in stripes, so that a stripe width of the optical absorption layer is larger than that of the optical waveguide layer;
- and
- performing ion implantation of protons in an oblique direction from a sidewall of the stripe.
5 more elements
Dependencies are inferred from the claim text.