Heater arrangement for crystal growth furnace
AssigneeAmerican Crystal Technologies, Inc.
InventorsJohn D. Schupp, David T. Hearst
Life of this patent
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AssigneeAmerican Crystal Technologies, Inc.
InventorsJohn D. Schupp, David T. Hearst
Estimating the term…
A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolating the crucible from the other individual growth stations. The first and second heater matrices each include at least two legs electrically connected in parallel and each of the legs have at least two resistance heaters electrically connected in series. Each of the individual growth stations have at least one of the resistance heaters within the first heater matrix and at least one of the resistance heaters within the second heater matrix associated therewith. The resistance heaters of the first heater matrix are located above the crucibles and are preferably adapted to provide a homogeneous temperature across tops of the crucibles. The resistance heaters of the second heater matrix are preferably located below the crucible and are preferably adapted to provide a temperature gradient across bottoms the crucibles.
A resistance heater for a crystal growth furnace, the resistance heater being located below a crucible and being adapted to provide a thermal gradient across a bottom surface of the crucible, the resistance heater comprising:
A crystal growth furnace comprising:
A crystal growth furnace comprising:
A crystal growth furnace comprising:
Dependencies are inferred from the claim text.