Method and apparatus for reducing PFC emission during semiconductor manufacture
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Ki Chae, Sang-Gon Lee, Sang-Hyuk Chung, Seong-Jin Heo
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Abstract
A method of reducing PFC emissions during a semiconductor manufacturing process that includes a set of sub-processes each of which produces at least one PFC includes the steps of exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream, treating the combined exhaust stream from each sub-process using a separate PFC abatement system, combining the treated exhaust streams to form a combined treated stream, and wet scrubbing the combined treated stream.
Claims17
A method of reducing PFC emissions during a semiconductor manufacturing process that includes a plurality of sub-processes each of which produces at least one PFC, the method comprising the steps of:
- (i) exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream;
- (ii) treating the combined exhaust stream from each sub-process using a separate PFC abatement system;
- (iii) combining the treated exhaust streams to form a combined treated stream;
- and
- (iv) wet scrubbing the combined treated stream.
A method of reducing PFC emissions during a semiconductor manufacturing process that includes a plurality of sub-processes each of which produces at least one PFC, the sub-processes including at least one etching sub-process and at least one CVD sub-process, the method comprising the steps of:
- (i) exhausting PFC's produced by each etching sub-process to a first common line to form a combined etching exhaust stream;
- (ii) treating the combined etching exhaust stream using a first PFC abatement system;
- (iii) exhausting PFC's produced by each CVD sub-process to a second common line to form a combined CVD exhaust stream;
- (iv) treating the combined CVD exhaust stream using a second PFC abatement system;
- (v) combining the treated combined etching exhaust stream and the treated combined CVD exhaust stream to form a combined treated stream;
- and
- (v) wet scrubbing the combined treated stream.
A system for reducing PFC emissions during a semiconductor manufacturing process that includes a plurality of sub-processes each of which produces at least one PFC, the system comprising:
- (a) a first plurality of devices for carrying out a first sub-process;
- (b) a first common line for PFC's exhausted from the first plurality of devices;
- (c) a first PFC abatement system connected to the first common line;
- (d) a second plurality of devices for carrying out a second sub-process;
- (e) a second common line for PFC's exhausted from the second plurality of devices;
- (f) a second PFC abatement system connected to the second common line;
- (g) a common treated exhaust line connected to the first and second PFC abatement systems;
- and
- (h) a wet scrubbing system connected to the common treated exhaust line.
A system for reducing PFC emissions during a semiconductor manufacturing process that includes a first plurality of etching sub-processes and at least one CVD sub-process, each of which produces at least one PFC, the system comprising:
- (a) a first plurality of devices comprising at least one device for carrying out each of the first plurality of etching sub-process;
- (b) a sub-process common line associated with each etching sub-process for PFC's exhausted from the at least one device for carrying out each of the etching sub-processes;
- (c) a first common line for receiving PFC's exhausted from the first plurality of devices;
- (d) a first PFC abatement system connected to the first common line;
- (e) a second plurality of devices for carrying out the at least one CVD sub-process;
- (f) a second common line for PFC's exhausted from the second plurality of devices;
- (g) a second PFC abatement system connected to the second common line;
- (h) a common treated exhaust line connected to the first and second PFC abatement systems;
- and
- (i) a wet scrubbing system connected to the common treated exhaust line.
Dependencies are inferred from the claim text.