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AssigneeMicron Technology, Inc.
InventorsDinesh Chopra, Nishant Sinha
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A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is removed at a rate that is substantially the same as or faster than a rate at which a material, such as tungsten, of the barrier layer is removed. The slurry is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier layer is oxidized. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry or the oxidation energy of the barrier layer material in the slurry may be greater than that of copper. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.
A system for polishing a conductive structure of a semiconductor device, the conductive structure including a conductive region comprising copper and an adjacent barrier layer, said system comprising:
A slurry for use in chemical-mechanical polishing processes, comprising at least one oxidizer, at least one pH control agent, and at least one inhibitor, said slurry being formulated with relative amounts of said at least one oxidizer, said at least one pH control agent, and said at least one inhibitor balanced so as to facilitate substantially concurrent polishing of a first structure comprising copper and a second structure comprising tungsten with said tungsten being removed at substantially the same rate as or at a slower rate than said copper is removed.
A method for formulating a slurry to be used with a fixed-abrasive polishing pad, comprising:
A method for formulating a slurry to be used with a fixed-abrasive polishing pad, comprising:
A method for formulating a slurry to be used with a fixed-abrasive polishing pad, comprising:
Dependencies are inferred from the claim text.