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US 6,602,112 B2Granted
Dissolution of metal particles produced by polishing
AssigneeRodel Holdings, Inc.
InventorsTony Quan Tran, Vikas Sachan, David Gettman, Terence M. Thomas, Craig D. Lack, Peter A. Burke
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Abstract
A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.
Claims15
A method for polishing metal on a semiconductor substrate, comprising the steps of:
- dispensing hydrogen peroxide onto a polishing pad to prepare the polishing pad for polishing,
- leaving a quantity of the hydrogen peroxide on the polishing pad,
- polishing a surface of the metal on a semiconductor substrate by using the polishing pad and the quantity of the hydrogen peroxide and a polishing composition,
- removing particles of the metal from the seimiconductor substrate by said polishing,
- dissolving the particles of the metal in the quantity of the hydrogen peroxide,
- continuing to polish the surface of the metal using the polishing pad and the polishing composition until the surface is smoothed to produce reduced quantities of particles by polishing, and
- continuing to polish the surface of the metal using the polishing pad and the polishing composition after the hydrogen peroxide has dissipated.
4 more elements
Dependencies are inferred from the claim text.