Method of reducing water spotting and oxide growth on a semiconductor structure

A system for rinsing and drying a semiconductor structure comprising:

• a vessel having a top, a bottom, and at least one side, said vessel including a semiconductor stage for disposing the semiconductor structure thereon;
• a DI water inlet configured to supply DI water in said vessel to at least partially fill said vessel to a level that would allow the semiconductor structure disposed on said semiconductor stage to be submerged in said DI water;
• at least one gas inlet configured to supply a gas inert to the semiconductor structure to substantially fill said vessel so that said gas is maintained above said level of said DI water, the at least one gas inlet is connected to a fail-shut valve, the at least one gas inlet comprising one of an inlet in the top of the vessel and an inlet in said at least one side of the vessel;
• and
• a plurality of liquid inlets configured to supply a liquid to the vessel so that said liquid is disposed between said DI water and said gas, said vessel configured such that said semiconductor stage having the semiconductor structure disposed thereon and an upper surface of said DI water move relative to each other so that the semiconductor structure is exposed through said upper surface of said DI water to said gas to rinse and dry the semiconductor structure in said vessel.