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US 6,601,452 B2Granted
Semiconductor pressure sensor having rounded corner portion of diaphragm
AssigneeDenso Corporation
InventorsYuichiro Murata, Inao Toyoda, Yasutoshi Suzuki
Life of this patent
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Abstract
A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.
Claims10
A semiconductor pressure sensor comprising:
- a semiconductor substrate having a recess formed on a surface thereof by anisotropic etching, the recess having a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the diaphragm, the corner portion being rounded and having a radius of curvature R, wherein:
- the radius of curvature R of the corner portion satisfies a formula of;
- R/S=526·(d/S)2−0.037·(d/S)+a1
- where S is an area of the diaphragm, d is a thickness of the diaphragm, 526 and 0.037 are proportional constants and a1 is a correction value that is in a range of 9.6×10−7 to 16×10−7 inclusive.
1 more element
A semiconductor pressure sensor comprising:
- a semiconductor substrate having a recess formed on a surface thereof, the recess having a sidewall, a bottom wall that serves as a diaphragm, and a corner portion provided between the sidewall and the diaphragm for detecting a pressure, the corner portion being rounded;
- and
- a base having a bonding surface bonded to the semiconductor substrate at an opposite side of the diaphragm and defining a pressure introduction passage for introducing the pressure to the diaphragm, wherein:
- a bonding angle defined between the sidewall of the recess and the bonding surface of the base is equal to or larger than 80° so that a separation withstand pressure of a bonding portion where the bonding surface is bonded to the semiconductor substrate is larger than a breaking withstand pressure of the diaphragm,
- the surface of the semiconductor substrate has a (110) plane orientation, and
- the sidewall of the recess has a (111) plane orientation.
3 more elements
Dependencies are inferred from the claim text.