Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
AssigneeFoundation for Research and Technology Hellas
InventorsKonstantinos Zekentes, Konstantin V. Vassilievski
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Abstract
A method of producing an ohmic contact to p-type silicon carbide comprising two layers, the first one comprising nickel silicide and the second one comprising titanium carbide is disclosed. The deposited layers are annealed to convert at least a part of deposited metals to nickel silicide and titanium carbide. The contact is formed by reaction between the metals and the semiconductor, and thus the in-situ simultaneous formation of metal silicide and carbide suppress the release of excess carbon at the contact interface. Noble metals may be deposited preferably in between titanium and nickel to improve the contact morphology.
Claims19
A method of forming an ohmic contact to a p-type SiC substrate, comprising the steps of:
- (A)(1) depositing a layer of aluminum, titanium and nickel, in that order, on said p-type SiC substrate to form aluminum, titanium and nickel metal contacts;
- (2) optionally repeating said step (A)(1) one or more times to form a series of said aluminum, titanium and nickel layers;
- and then,
- (B) heat treating the resulting article for sufficient time and at sufficient temperature to convert at least part of said deposited material to titanium carbide and nickel silicide by reaction of SiC with said titanium and nickel metal contacts.
An ohmic contact to a p-type SiC substrate, said ohmic contact comprising a layer of aluminum, titanium and nickel, deposited in that order on said p-type SiC substrate, wherein aluminum, titanium and nickel of said layer form titanium carbide and nickel silicide.
An ohmic contact to a p-type SiC substrate, comprising titanium carbide and nickel silicide, optionally containing one or more layers of one or more noble metals, wherein said contact is made by the method comprising the steps of:
- (A)(1) depositing a layer of aluminum, titanium and nickel, in that order, on said p-type SiC substrate to form aluminum, titanium and nickel metal contacts;
- (2) optionally repeating said step (A)(1) one or more times to form a series of said aluminum, titanium and nickel layers;
- and then,
- (B) heat treating the resulting article for sufficient time and at sufficient temperature to convert at least part of said deposited material to titanium carbide and nickel silicide by reaction of SiC with said titanium and nickel metal contacts.
Dependencies are inferred from the claim text.