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US 6,599,637 B1Granted
Silicon nitride composite substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsAi Itoh, Michimasa Miyanaga, Masashi Yoshimura
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AssigneeSumitomo Electric Industries, Ltd.
InventorsAi Itoh, Michimasa Miyanaga, Masashi Yoshimura
Estimating the term…
A Si3N4 composite substrate which manifests no generation of cracking on the substrate even by mechanical shock or thermal shock, and is excellent in heat radiation property and heat-cycle-resistance property is obtained by using a Si3N4 substrate as a ceramic substrate. A Si3N4 substrate having a thermal conductivity of 90 W/m·K or more and a three-point flexural strength of 700 MPa or more is used, and the thickness tm of a metal layer connected on one major surface of the substrate and the thickness tc of the Si3N4 substrate are controlled so as to satisfy the relation formula: 2 tm≦tc≦20 tm. When metal layers are connected to both major surfaces of the Si3N4 substrate, the thickness tc and the total thickness ttm of the metal layers on both major surfaces are controlled so as to satisfy the relation formula: ttm≦tc≦10 ttm.
A silicon nitride composite substrate comprising a silicon nitride ceramic substrate having a thermal conductivity of 90 W/m·K or more and a three-point flexural strength of 700 MPa or more, and a metal layer connected to one major surface thereof, wherein the thickness tc of the silicon nitride ceramic substrate and the thickness tm of the metal layer satisfy the relation formula:
A silicon nitride composite substrate comprising a silicon nitride ceramic substrate having a thermal conductivity of 90 W/m·K or more and a three-point flexural strength of 700 MPa or more, and a metal layer connected to both major surfaces thereof, wherein the thickness tc of the silicon nitride ceramic substrate and the total thickness ttm of the metal layers on both major surfaces satisfy the relation formula:
A silicon nitride composite substrate comprising a silicon nitride ceramic substrate having a thermal conductivity of 90 W/m·K or more and a three-point flexural strength of 700 MPa or more, and a metal layer connected to one major surface thereof, wherein the thickness tc of the silicon nitride ceramic substrate and the thickness tm of the metal layer satisfy the relation formula:
Dependencies are inferred from the claim text.