In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect

A method of making giant magnetoresistive structures magnetized along an easy anisotropy axis, comprising:

• while providing an existing magnetic field in a magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location, depositing on natural Si wafers or other insulating substrates with natural oxide using magnetron sputtering:
• a Fe buffer layer, and
• lower and upper Co layers separated by a nonmagnetic Cu spacer.

A method of making giant magnetoresistive structures magnetized along an easy anisotropy axis, comprising:

• while providing an existing magnetic field in a magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location, depositing on natural Si wafers or other insulating substrates using magnetron sputtering:
• a buffer layer, and
• lower and upper Co layers separated by a nonmagnetic spacer.

A giant magnetoresistive structure magnetized along an easy anisotropy axis comprising:

• a Fe buffer layer,
• lower and upper Co layers separated by a nonmagnetic Cu spacer, wherein the layers are deposited on natural Si wafers or other insulating substrates with natural oxide using a magnetron sputtering system, while providing an existing magnetic field in the magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location.

A giant magnetoresistive structure magnetized along an easy anisotropy axis comprising:

• a buffer layer having a thickness of 2-7 nm, a lower Co layer having a thickness of 2-7 nm and an upper Co layer having a thickness of 1-4 nm, the two Co layers separated by a nonmagnetic spacer having a thickness of 1-5 nm, wherein the layers are deposited on natural Si wafers or other insulating substrates with natural oxide using a magnetron sputtering system, while providing an existing magnetic field in the magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location.

A giant magnetoresistive structure magnetized along an easy anisotropy axis comprising:

• a buffer layer having a thickness of 2-20 nm,
• a lower Co layer having a thickness of 2-10 nm, and
• an upper Co layer having a thickness of 1-4 nm, the two Co layers separated by a nonmagnetic spacer having a thickness of 1-7 nm, wherein the layers are deposited on natural Si wafers or other insulating substrates with natural oxide using a magnetron sputtering system, while providing an existing magnetic field in the magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location.

A giant magnetoresistive structure magnetized along an easy anisotropy axis comprising:

• a buffer layer having a thickness of at least 1 nm,
• a lower Co or Co alloy layer having a thickness of 1-30 nm, and
• an upper Co or Co alloy layer having a thickness of 1-30 nm, the two Co or Co alloy layers separated by a nonmagnetic spacer having a thickness of 1-7 nm, wherein the layers are deposited on natural Si wafers or other insulating substrates with natural oxide using a magnetron sputtering system, while providing an existing magnetic field in the magnetron sputtering system with a strength in the range of 10 to 40 Oe at a sample location.