System architecture of semiconductor manufacturing equipment
AssigneeApplied Materials, Inc.
InventorsRatson Morad, Ho Seon Shin
Life of this patent
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Abstract
A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer load lock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.
Claims8
Apparatus for manufacturing a semiconductor substrate, comprising:
- first and second substrate handling robots respectively mounted within first and second robot chambers;
- a first deposition chamber coupled to the first robot chamber so that the first robot can transfer a substrate into and out of the first deposition chamber, wherein the first deposition chamber is not coupled to the second robot chamber;
- a second deposition chamber coupled to the second robot chamber so that the second robot can transfer a substrate into and out of the second deposition chamber, wherein the second deposition chamber is not coupled to the first robot chamber;
- and
- one or more pass-through chambers, wherein each of the pass-through chambers is coupled to both the first robot chamber and the second robot chamber so that both the first robot and the second robot can transfer a substrate into and out of each of the pass-through chambers;
- wherein at least one of the pass-through chambers includes a heat source for heating a substrate.
Apparatus for manufacturing a semiconductor substrate, comprising:
- first and second substrate handling robots respectively mounted within first and second robot chambers;
- a first plasma chamber coupled to the first robot chamber so that the first robot can transfer a substrate into and out of the first plasma chamber, wherein the first plasma chamber is not coupled to the second robot chamber;
- a second plasma chamber coupled to the second robot chamber so that the second robot can transfer a substrate into and out of the second plasma chamber, wherein the second plasma chamber is not coupled to the first robot chamber;
- and
- one or more pass-through chambers, wherein each of the pass-through chambers is coupled to both the first robot chamber and the second robot chamber so that both the first robot and the second robot can transfer a substrate into and out of each of the pass-through chambers;
- wherein at least one of the pass-through chambers includes a heat source for heating a substrate.
Dependencies are inferred from the claim text.