Eliminating dishing non-uniformity of a process layer

A method, comprising:

• providing at least one wafer for polishing;
• polishing a processing surface of the at least one wafer using a first polishing process that is comprised of a slurry and a first polishing pad;
• removing the slurry from the processing surface of the at least one wafer;
• planarizing the processing surface of the at least one wafer using a substantially slurryless second polishing process that is comprised of a second polishing pad, the second polishing pad being more abrasive than the first polishing pad;
• measuring a surface non-uniformity of the processing surface of the wafer;
• and
• determining a duration of the second polishing process based on the measured surface non-uniformity.

A system, comprising:

• a polishing tool for polishing wafers, the polishing tool being adapted to:
• receive at least one wafer having a process layer formed thereon;
• polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• remove the slurry from the surface of the process layer;
• and
• planarize the surface of the process layer using a substantially slurryless second polishing process that is comprised of a second polishing pad, the second polishing pad being more abrasive than the first polishing pad;
• and
• a process controller coupled to the polishing tool, the process controller being adapted to:
• communicate with at least one of a slurry controller and the polishing tool;
• receive measured surface non-uniformity data from a measuring tool;
• and
• determine a duration of the second polishing process based upon the measured surface non-uniformity data.

A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling a polishing tool in a manufacturing process, comprising:

• providing at least one wafer having a process layer formed thereon;
• polishing a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• removing the slurry from the surface of the process layer;
• planarizing the surface of the process layer using a substantially slurryless second polishing process that is comprised of a second polishing pad, the second polishing pad being more abrasive than the first polishing pad;
• measuring a surface non-uniformity of the process layer;
• and
• determining a duration of the second polishing process based on the measured surface non-uniformity.

A system, comprising:

• means for receiving at last one wafer having a process layer formed thereon;
• means for polishing a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• means for removing the slurry from the surface of the process layer;
• means for planarizing the surface of the process layer using a substantially slurryless second polishing process that is comprised of a second polishing pad, the second polishing pad being more abrasive than the first polishing pad;
• means for measuring a surface non-uniformity of the process layer;
• and
• means for determining a duration of the second polishing process based on the measured surface non-uniformity.

A method, comprising:

• providing at least one wafer having a process layer formed thereon;
• polishing a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• removing the slurry from the surface of the process layer by capturing the slurry from the first polishing process using a slurry re-circulation loop and replacing the first polishing pad with a second polishing pad;
• and
• planarizing the surface of the process layer using a substantially slurryless second polishing process that is comprised of the second polishing pad, the second polishing pad being more abrasive than the first polishing pad.

A method, comprising:

• providing at least one wafer for polishing;
• polishing a processing surface of the at least one wafer using a first polishing process that is comprised of a slurry and a first polishing pad;
• removing the slurry from the processing surface of the at least one wafer by capturing the slurry from the first polishing process using a slurry re-circulation loop and replacing the first polishing pad with a second polishing pad;
• and
• planarizing the processing surface of the at least one wafer using a substantially slurryless second polishing process that is comprised of the second polishing pad, the second polishing pad being more abrasive than the first polishing pad.

A system, comprising:

• a polishing tool for polishing wafers, the polishing tool being adapted to:
• receive at least one wafer having a process layer formed thereon;
• polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• remove the slurry from the surface of the process layer;
• and
• planarize the surface of the process layer using a substantially slurryless second polishing process that is comprised of a second polishing pad, the second polishing pad being more abrasive than the first polishing pad;
• a process controller coupled to the polishing tool, the process controller being adapted to communicate with at least one of a slurry controller and the processing tool;
• and
• a slurry controller that is coupled to the process controller, the slurry controller being adapted to:
• remove the slurry from the surface of the process layer using a slurry re-circulation loop based on a signal received from the process controller;
• and
• initiate a process that replaces the first polishing pad with the second polishing pad.

A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling a polishing tool in a manufacturing process, comprising:

• providing at least one wafer having a process layer formed thereon;
• polishing a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad;
• removing the slurry from the surface of the process layer by capturing the slurry from the first polishing process using a slurry re-circulation loop and replacing the first polishing pad with a second polishing pad;
• and
• planarizing the surface of the process layer using a substantially slurryless second polishing process that is comprised of the second polishing pad, the second polishing pad being more abrasive than the first polishing pad.