Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques

A method of fabricating a compound semiconductor device without the inclusion of a low temperature buffer layer, the method utilizing HVPE techniques and comprising the steps of:

• locating a Ga metal in a first source zone of a reaction chamber;
• locating an Al metal in a second source zone of said reaction chamber;
• locating an In metal in a third source zone of said reaction chamber;
• locating at least one acceptor impurity metal in a fourth source zone of said reaction chamber;
• locating in at least one supplemental source zone of said reaction chamber at least one supplemental Group III material or at least one supplemental Group V material or both said at least one supplemental Group III material and said at least one supplemental Group V material, wherein said at least one supplemental Group III material is selected from the group of materials consisting of Al and B, and wherein said at least one supplemental Group V material is selected from the group of materials consisting of P and As;
• locating a substrate within a growth zone of said reaction chamber;
• heating said substrate to a first temperature, wherein said first temperature is greater than 900° C.;
• heating said Ga metal to a second temperature;
• heating said Al metal to a third temperature;
• heating said In metal to a fourth temperature;
• heating said at least one acceptor impurity metal to a fifth temperature;
• heating said at least one supplemental Group III material or said at least one supplemental Group V material or both said at least one supplemental Group III material and said at least one supplemental Group V material to at least a sixth temperature;
• introducing a halide reaction gas into said first source zone to form a Ga halide compound;
• introducing said halide reaction gas into said second source zone to form an Al halide compound;
• transporting said Ga halide compound and said Al halide compound to said growth zone via a flowing inert gas;
• introducing a reaction gas into said growth zone, said reaction gas containing N;
• growing a first AlGaN layer on said substrate, said first AlGaN layer formed by said reaction gas reacting with said Ga halide compound and said Al halide compound, wherein said first AlGaN layer is an n-type AlGaN layer;
• discontinuing said step of transporting said Al halide compound to said growth zone;
• growing a first GaN layer on said first AlGaN layer, said first GaN layer formed by said reaction gas reacting with said Ga halide compound, wherein said first GaN layer is an n-type GaN layer;
• transporting said in metal to said growth zone via said flowing inert gas;
• transporting said at least one supplemental Group III material or said at least one supplemental Group V material or both said at least one supplemental Group III material and said at least one supplemental Group V material to said growth zone via said flowing inert gas;
• growing a non-continuous quantum dot layer on said first GaN layer, said non-continuous quantum dot layer comprised of a plurality of quantum dot regions, said plurality of quantum dot regions comprised of Ga, N, In, and said at least one supplemental Group III material or said at least one supplemental Group V material or both said at least one supplemental Group III material and said at least one supplemental Group V material;
• discontinuing said step of transporting said at least one supplemental Group III material or said at least one supplemental Group V material or both said at least one supplemental Group III material and said at least one supplemental Group V material to said growth zone;
• discontinuing said step of transporting said In metal to said growth zone;
• transporting said at least one acceptor impurity metal to said growth zone via said flowing inert gas;
• growing a second GaN layer, wherein said non-continuous quantum dot layer is interposed between said first GaN layer and said second GaN layer, said second GaN layer formed by said reaction gas reacting with said Ga halide compound, wherein said second GaN layer contains said at least one acceptor impurity metal, and wherein said second GaN layer is a p-type GaN layer;
• resuming said step of transporting said Al halide compound to said growth zone;
• and
• growing a second AlGaN layer on said second GaN layer, said second AlGaN layer formed by said reaction gas reacting with said Ga halide compound and said Al halide compound, wherein said second AlGaN layer contains said at least one acceptor impurity metal, and wherein said second AlGaN layer is a p-type AlGaN layer.