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US 6,596,602 B2Granted
Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD
AssigneeNEC Corporation
InventorsToshihiro Iizuka, Tomoe Yamamoto
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Abstract
The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over the lower electrode by the ALCVD process; and forming an upper electrode of the capacitor on the capacity insulator film.
Claims8
A method for fabricating a semiconductor device, comprising the steps of:
- forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over said lower electrode by means of atomic layer chemical vapor deposition (ALCVD);
- and
- forming an upper electrode of said capacitor on said capacity insulator film.
Dependencies are inferred from the claim text.