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US 6,590,259 B2Granted
Semiconductor device of an embedded DRAM on SOI substrate
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, Ramachandra Divakaruni, Jeffrey P. Gambino, Jack A. Mandelman
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Abstract
A semiconductor device is presented which is directed to a method of forming embedded DRAM and logic devices, where the DRAM devices are formed in bulk, single crystalline semiconductor regions and logic devices are formed in silicon-on-insulator (“SOI”) regions and where buried, doped glass is used as a mask to form deep trenches for storage in the bulk region. The resulting structure is also disclosed.
Claims16
A semiconductor apparatus comprising:
- (a) a single crystalline bulk region having a substantially planar surface, and characterized by a first conductivity type;
- (b) a first portion of the planar surface, said first portion having a first perimeter, said first perimeter defining a silicon-on-insulator region adjacent the single crystalline bulk region;
- (c) a second portion of the planar surface, said second portion having a second perimeter, said second perimeter defining a device portion of the single crystalline bulk region wherein embedded memory devices may be formed, and wherein said second portion is distinct from said first portion;
- (d) embedded logic devices formed in the silicon-on-insulator region;
- (e) embedded memory devices formed in the device portion of the single crystalline bulk region;
- and
- (f) doped polysilicon-filled storage trenches extending into the device portion of the single crystalline bulk region, wherein said storage trenches extend into a doped portion of said single crystalline bulk region, wherein said doped portion of said single crystalline bulk region is characterized by a second conductivity type, wherein said first and second conductivity types are different, and wherein said storage trenches are isolated from a remaining portion of said single crystalline bulk region by said doped portion of said single crystalline bulk region.
4 more elements
A semiconductor apparatus comprising:
- (a) a single crystalline bulk region having a substantially planar surface, and characterized by a first conductivity type;
- (b) a first portion of the planar surface, said first portion having a first perimeter, said first perimeter defining a silicon-on-insulator region adjacent the single crystalline bulk region;
- (c) a second portion of the planar surface, said second portion having a second perimeter, said second perimeter defining a device portion of the single crystalline bulk region wherein embedded memory devices may be formed, said single crystalline bulk region characterized by substantially the same crystalline structure as the planar surface, and wherein said second portion is distinct from said first portion;
- (d) at least one deep doped polysilicon-filled storage trench extending into the single crystalline bulk region, wherein said storage trench extends into a doped portion of said single crystalline bulk region, wherein said doped portion of said single crystalline bulk region is characterized by a second conductivity type, wherein said first and second conductivity types are different, and wherein said storage trench is isolated from a remaining portion of said single crystalline bulk region by said doped portion of said single crystalline bulk region;
- (e) an array of devices constructed in the device portion of the single crystalline bulk region;
- (f) at least one device constructed on the first portion of the planar surface;
- (g) electrical contacts connected to each device;
- and
- (h) an insulative material deposited upon the first portion of the planar surface.
6 more elements
Dependencies are inferred from the claim text.