Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
AssigneeApplied Materials, Inc.
InventorKent Rossman
Life of this patent
Estimating the term…
Abstract
Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.
Claims14
A method of operating a substrate processing chamber, said method comprising:
- prior to a substrate processing operation, forming a layer of silicon over an interior surface of said substrate processing chamber, wherein said layer of silicon comprises at least 70% atomic silicon;
- transferring a substrate into said substrate processing chamber after forming said silicon layer;
- and
- processing said substrate in said substrate processing chamber.
A method of operating a substrate processing chamber, said method comprising:
- prior to transferring a substrate into said substrate processing chamber, depositing a first layer of a seasoning film over an interior surface of said substrate processing chamber by flowing a seasoning gas comprising a silane gas having a formula of SinH2+2 into said substrate processing chamber and forming a plasma having a density of at least 1×1011 ions/cm3 from said gas, wherein said first seasoning film layer comprises at least 70% atomic silicon;
- transferring a substrate that includes a plurality of raised aluminum lines formed thereon into said substrate processing chamber, wherein an outer strata of said aluminum lines comprises aluminum fluoride;
- depositing a dielectric layer over said substrate;
- and
- transferring said substrate out of said substrate processing chamber.
A substrate processing system comprising:
- a housing that forms a vacuum chamber having an interior surface;
- a substrate holder, located within said housing, configured to hold a substrate;
- a gas delivery system configured to introduce one or more gases into said vacuum chamber;
- a controller, operatively coupled to control said gas delivery system;
- and
- a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing system, said computer-readable program comprising:
- instructions for, prior to a substrate processing operation, controlling said gas delivery system to flow a seasoning gas consisting essentially of a silane gas and an inert gas into said vacuum chamber to deposit a film comprising at least 70% atomic silicon over at least a portion of said interior surface of said vacuum chamber.
Dependencies are inferred from the claim text.