US 6,589,707 B2 · Partially crosslinked polymer for bilayer photoresist

Abstract

The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

Claims23

Dependent claims

A photoresist polymer derived from a monomer comprising a first monomer selected from the group consisting of compounds of the formula:

and mixtures thereof, wherein
X1, X2, Y1 and Y2 are alkylene;
R5 is hydrogen or alkyl;
s and t are integers from 0 to 2;
n is an integer from 1 to 5;
and
X is a moiety of the formula:
wherein
each of R1, R2, R3 and R4 is independently hydrogen, C1-C10 alkyl, or C1-C10 alkyl comprising an ether linkage.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/788,181Filed 15 Feb 2001

Priority

KR 2000-785318 Feb 2000

Published

US 2001/0031420 A118 Oct 2001

Granted

8 Jul 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

G03F 7/0758
Macromolecular compounds containing Si-O, Si-C or Si-N bonds: with silicon- containing groups in the side chains
C07F 7/1804
Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages: compounds having Si-O-C linkages
C08F 30/08
Containing a metal: containing silicon
G03F 7/0045
Photosensitive materials: with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Partially crosslinked polymer for bilayer photoresist

Life of this patent

Partially crosslinked polymer for bilayer photoresist

Life of this patent

Abstract

Claims23