Hot-carrier degradation simulation of a semiconductor device

A method of fabricating a metal-insulator-semiconductor transistor, comprising:

• performing a hot-carrier degradation simulation;
• and
• designing the metal-insulator-semiconductor transistor while using a result of the hot-carrier degradation simulation,
• said performing the hot-carrier degradation simulation comprising calculating a degradation of a device characteristic of the metal-insulator-semiconductor transistor by using at least both of deep surface states and shallow surface states formed in a gate insulation film.

A computer-readable medium storing a program code, comprising:

• performing a hot-carrier degradation simulation of a metal-insulator-semiconductor transistor by calculating a degradation of a device characteristic of the metal-insulator-semiconductor transistor using at least both of deep surface states and shallow surface states formed in a gate insulation film, said calculating comprising,
• obtaining a first degradation quantity that depends on the deep surface states,
• obtaining a second degradation quantity that depends on the shallow surface states, and
• obtaining a sum of the first degradation quantity and the second degradation quantity.