Semiconductor laser device
AssigneeKabushiki Kaisha Toshiba
InventorsGenichi Hatakoshi, Hideto Furuyama
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Abstract
Disclosed is a semiconductor laser device capable of minimizing the spot diameter of a laser light and also capable of improving the transmittance of light passing through a fine aperture. The semiconductor laser device comprises a light absorption film provided with a fine aperture on the outside of the light-emitting surface of the semiconductor laser element. The aperture is formed such that the aperture width W1 in a direction parallel to the polarizing direction of the laser light is smaller than half the oscillation wavelength of the semiconductor laser element, and the aperture width W2 in a direction perpendicular to the polarizing direction is larger than the aperture width W1.
Claims24
A semiconductor laser device, comprising:
- a semiconductor laser element having a light-emitting surface from which a laser light having a wavelength λ is emitted;
- and
- a light absorption film mounted to cover the light-emitting surface of said semiconductor laser element and provided with an aperture serving to form an intensity profile of said laser light in a width smaller than said wavelength λ when the laser light emitted from the light-emitting surface of the semiconductor laser element passes through said aperture;
- wherein said aperture has a first aperture width W1 and a second aperture width W2, said first aperture width W1 in a direction parallel to the polarizing direction of said laser light is shorter than said second aperture width W2 in a direction perpendicular to the polarizing direction of the laser light, said first aperture width W1 in a direction parallel to a longitudinal direction of an emitted-light pattern of said laser light is shorter than half the oscillating wavelength λ of the semiconductor laser element, and said longitudinal direction of the emitted-light pattern is parallel to a junction formed by semiconductor layers at the light-emitting surface.
A semiconductor laser device, comprising:
- a semiconductor laser element having a light-emitting surface from which a laser light is emitted;
- and
- a light absorption film mounted to cover the light-emitting surface of said semiconductor laser element and provided with an aperture that permits passage of a part of the laser light emitted from the light-emitting surface of said semiconductor laser element;
- wherein said aperture has a first aperture width W1 and a second aperture width W2, said first aperture width W1 in a direction parallel to the polarizing direction of said laser light and a longitudinal direction of an emitted-light pattern of said laser light is shorter than half the oscillating wavelength λ of the semiconductor laser element, said longitudinal direction of the emitted-light pattern is parallel to a junction formed by semiconductor layers at the light-emitting surface, and said second aperture width W2 in a direction perpendicular to the polarizing direction of the laser light is longer than said first aperture width W1.
A semiconductor laser device, comprising:
- a semiconductor laser element having a light-emitting surface from which a laser light is emitted;
- and
- a light absorption film mounted to cover the light-emitting surface of said semiconductor laser element and provided with an aperture positioned to face a part of said light-emitting surface;
- wherein said aperture has a first aperture width W1 and a second aperture width W2, said first aperture width W1 in a direction parallel to the polarizing direction of said laser light is shorter than said second aperture width W2 in a direction perpendicular to the polarizing direction of the laser light, said first aperture width W1 in a direction parallel to a longitudinal direction of an emitted-light pattern of said laser light is shorter than half the oscillating wavelength λ of the semiconductor laser element, and said longitudinal direction of the emitted-light pattern is parallel to a junction formed by semiconductor layers at the light-emitting surface.
Dependencies are inferred from the claim text.