Apparatus and method for laser radiation

A method for forming a semiconductor device comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• splitting a linear laser light in the longitudinal direction thereof by cylindrical lenses;
• and
• irradiating said linear laser light to said semiconductor film;
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein width of each of said cylindrical lenses is in the range from 0.1 mm to 5 mm.

A method for forming a semiconductor device comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• shaping a laser light into a linear laser light;
• splitting said linear laser light in a longitudinal direction thereof by cylindrical lenses;
• irradiating said linear laser light to said semiconductor film;
• and
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein width (mm) of said laser light, corresponding to said longitudinal direction, incident upon said cylindrical lenses, as an abscissa, and width (mm) of each of said cylindrical lenses, as an ordinate, are set in the range defined by coordinates represented by (30, 0.1), (80, 0.1), (80, 5), (50, 5) and (30, 3).

A method for forming a semiconductor device comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• splitting a linear laser light in the longitudinal direction thereof by cylindrical lenses;
• and
• irradiating said linear laser light to said semiconductor film;
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein the number y of said cylindrical lenses and length x (mm) of said linear laser light on said semiconductor film satisfy a formula:
• (43/600)×−(1/6)≦y≦(×/5).

A method for forming a thin film transistor comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• splitting a linear laser light in the longitudinal direction thereof by cylindrical lenses;
• and
• irradiating said linear laser light to said semiconductor film;
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein length of said linear laser light in the longitudinal direction thereof, as an abscissa, and the number of said cylindrical lenses, as an ordinate, are set in the range defined by coordinates represented by (100, 7), (700, 50), (700, 140), and (100, 20) where said length of said linear laser light is measured in millimeters.

A method for forming a thin film transistor comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• splitting a linear laser light in the longitudinal direction thereof by cylindrical lenses;
• and
• irradiating said linear laser light to said semiconductor film;
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein width of each of said cylindrical lenses is in the range from 0.1 mm to 5 mm.

A method for forming a thin film transistor comprising:

• forming a semiconductor film comprising silicon to become at least a channel formation region over a substrate;
• shaping a laser light into a linear laser light;
• splitting said linear laser light in a longitudinal direction thereof by cylindrical lenses;
• irradiating said linear laser light to said semiconductor film;
• and
• forming a gate electrode adjacent to said semiconductor film with a gate insulating film therebetween,
• wherein width (mm) of said laser light, corresponding to said longitudinal direction, incident upon said cylindrical lenses, as an abscissa, and width (mm) of each of said cylindrical lenses, as an ordinate, are set in the range defined by coordinates represented by (30, 0.1), (80, 0.1), (80, 5), (50, 5) and (30, 3).