Electro-optic electric field probe
AssigneeSouthwest Sciences Incorporated
InventorDaniel J. Kane
Life of this patent
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Abstract
A non-invasive electro-optic probe and probe method for probing electric fields in semiconductor devices comprising directing laser output at a semiconductor device to be probed employing a laser having an operating wavelength such that photon energy of a second harmonic wavelength of the operating wavelength is below the band gap of a semiconductor comprised by the semiconductor device and detecting second harmonic wavelength but not operating wavelength radiation from the semiconductor device.
Claims20
A non-invasive electro-optic probe for probing electric fields in semiconductor devices, said probe comprising:
- a laser having an operating wavelength such that photon energy of a second harmonic wavelength of said operating wavelength is below a band gap of a semiconductor comprised by a semiconductor device being probed, said laser output being directed at the semiconductor device being probed;
- and
- detection apparatus receiving radiation from the semiconductor being probed, said detection apparatus being sensitive to said second harmonic wavelength but not to said operating wavelength.
A non-invasive electro-optic probe method for probing electric fields in semiconductor devices, the method comprising the steps of:
- directing laser output at a semiconductor device being probed employing a laser having an operating wavelength such that photon energy of a second harmonic wavelength of the operating wavelength is below a band gap of a semiconductor comprised by the semiconductor device being probed;
- and
- detecting second harmonic wavelength but not operating wavelength radiation from the semiconductor device being probed.
Dependencies are inferred from the claim text.