Light emitting diode with low-temperature solder layer
AssigneeUnited Epitaxy Company, Ltd.
InventorsTzer-Perng Chen, Chih-Sung Chang, Kuang-Neng Yang
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Abstract
A light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductibility and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only, requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.
Claims15
A light emitting diode, comprising:
- a epitaxial structure has a plurality of III-V compound semiconductor layers to generate light with injection current;
- a silicon substrate has a first ohmic contact metal layer on one side and a second ohmic contact metal layer on the other side;
- and
- a low-temperature solder layer for bonding the epitaxial structure to the first ohmic contact metal layer of the silicon substrate.
A light emitting diode, comprising:
- an epitaxial structure has a plurality of III-V compound semiconductor layers to generate light with injection current, wherein a first ohmic contact metal is formed on one side of the epitaxial structure, and a second ohmic contact metal is formed on the other side of the epitaxial structure;
- a silicon substrate has a third ohmic contact metal layer on one side and a fourth ohmic contact metal layer on the other side;
- and
- a low-temperature solder layer for bonding the third ohmic contact metal layer of the silicon substrate to the second ohmic contact metal layer of the epitaxial structure.
Dependencies are inferred from the claim text.