Approach to structurally reinforcing the mechanical performance of silicon level interconnect layers
AssigneeTexas Instruments Incorporated
InventorsMichael F. Chisholm, Darvin R. Edwards, Gregory B. Hotchkiss, Reynaldo Rincon, Viswanathan Sundararaman
Life of this patent
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Abstract
A conductive via pattern (110) between the uppermost metal interconnect layer (Mn) and next underlying metal interconnect layer (Mn−1) in the bond pad areas strengthens the interlevel dielectric (ILD3) between metal layers (Mn and Mn−1). The conductive via layer (110) may, for example, comprise parallel rails (114) or a grid of cross-hatch rails (116). By spreading the stress concentration laterally, the conductive via layer (110) inhibits micro-cracking from stress applied to the bond pad (112).
Claims9
An integrated circuit comprising:
- a bondpad located at a top metal interconnect level;
- a metal pad located below said bondpad in an underlying metal interconnect level;
- a dielectric layer located between the top metal interconnect level and the underlying metal interconnect level;
- and
- a conductive via structure shaped into a grid of cross-hatched rails, said conductive via structure extending from said bondpad to said metal pad.
An integrated circuit comprising:
- a bondpad located at a top metal interconnect level;
- a metal pad located below said bondpad in an underlying metal interconnect level;
- a dielectric layer located between the top metal interconnect level and the underlying metal interconnect level;
- and
- a conductive via structure comprising a plurality of parallel rails extending in a lateral direction, said conductive via structure extending vertically from said bondpad to said metal pad to structurally reinforce said dielectric layer under said bondpad.
An integrated circuit comprising:
- a bondpad located at a top metal interconnect level;
- a metal pad located below said bondpad in an underlying metal interconnect level;
- a dielectric layer located between the top metal interconnect level and the underlying metal interconnect level;
- and
- a conductive via structure extending vertically from said bondpad to said metal pad, said conductive via structure extending laterally to structurally reinforce a portion of said dielectric layer under said bondpad.
Dependencies are inferred from the claim text.