Sapphire substrate, semiconductor device, electronic component, and crystal growing method
AssigneeNippon Telegraph and Telephone Corporation
InventorTakashi Matsuoka
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Abstract
In a sapphire substrate having a heteroepitaxial growth surface, the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of the sapphire substrate about a c-axis of the sapphire substrate through 8° to 20° in a crystal lattice of the sapphire substrate. A semiconductor device, electronic component, and crystal growing method are also disclosed.
Claims24
A sapphire substrate having a heteroepitaxial growth surface, wherein the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate.
A sapphire substrate having a heteroepitaxial growth surface, wherein the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of said sapphire substrate about a c-axis of said sapphire substrate through 13° to 18° in a crystal lattice of said sapphire substrate.
A sapphire substrate having a hereroepitaxial growth surface, wherein the heteroepitaxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0 } plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate and tilting the plane by 0.1° to 20° with respect to the c-axis, said tilting not involving any rotation about the c-axis.
A sapphire substrate having a heteroepitaxial growth surface, wherein the heteroepitaxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0} plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate and tilting the plane by 0.1° to 2° with respect to the c-axis said tilting not involving any rotation about the c-axis.
A semiconductor device comprising at least one layer of a single crystal of a group III nitride InN, GaN, or AlN or a mixed crystal In1−X−YGaXAlYN (0≦X<1,0≦Y<1, and 0<X+Y≦1) grown on a sapphire substrate, said substrate having a heteroepitaxial growth surface, in which the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate.
A semiconductor device comprising at least one layer of a single crystal of a group III nitride InN, GaN, or AlN or a mixed crystal In1−X−YGaXAlYN (0≦X<1, 0≦Y<1, and 0<X+Y≦1) grown on a sapphire substrate, said substrate having a heteroepitaxial growth surface, in which the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of said sapphire substrate about a c-axis of said sapphire substrate through 13° to 18° in a crystal lattice of said sapphire substrate.
A semiconductor device comprising at least one layer of a single crystal of a group III nitride InN, GaN, or AlN or a mixed crystal In1-X-YGaXAlYN (0≦X<1, 0≦Y<1 and 0<X+Y≦1) grown on a sapphire substrate, said substrate having a heteroepitaxial growth surface, in which the heteroepitaxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0} plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate and tilting the plane by 0.1° to 2° with respect to the c-axis, said tilting not involving any rotation about the c-axis.
A semiconductor device comprising at least one layer of a single crystal of a group III nitride InN, GaN, or AlN or a mixed crystal In1-X-YGaXAlYN (0≦X<1, 0≦Y<1 and 0<X+Y≦1) grown on a sapphire substrate, said substrate having a heteroepitaxial growth surface, in which the heteroepitaxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0} plane of said sapphire substrate about a c-axis of said sapphire substrate through 8° to 20° in a crystal lattice of said sapphire substrate and tilting the plane by 0.1° to 2° with respect to the c-axis, said tilting not involving any rotation about the c-axis.
An electronic component comprising at least:
- a crystal substrate having a rhombohedral crystal structure and, as a major surface, a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 10° to 20°;
- and
- a crystal layer of a nitride material grown on the major surface of said crystal substrate.
An electronic component characterized by comprising at least:
- a crystal substrate (1) having a rhombohedral crystal structure and, as a major surface, a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 13° to 18°;
- and
- a crystal layer (2) of a nitride material grown on the major surface of said crystal substrate.
An electronic component comprising at least:
- a crystal substrate having a rhombohedral crystal structure and having as a major surface a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 13° to 18°;
- and
- a crystal layer of a nitride material grown on the major surface of said crystal substrate, wherein said crystal substrate is a corundum substrate.
An electronic component comprising at least:
- a crystal substrate having a rhombohedral crystal structure and having as a major surface a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 10° to 20°;
- and
- a crystal layer of a nitride material grown on the major surface of said crystal substrate wherein the nitride material is a semiconductor material containing nitrogen and gallium,
- wherein said crystal substrate is a corundum substrate.
An electronic component comprising at least:
- a crystal substrate having a rhombahedral crystal structure and having as a major surface a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 10° to 20°;
- and
- a crystal layer of a nitride material grown on the major surface of said crystal substrate,
- wherein the nitride material is a semiconductor material containing nitrogen and gallium,
- wherein the nitride material is a semiconductor material containing indium and aluminum in addition to nitrogen and gallium, and
- wherein said crystal substrate is a corundum substrate.
An electronic component comprising at least:
- a crystal substrate having a rhombohedral crystal structure and having as a major surface a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 10° to 20°;
- and
- a crystal layer of a nitride material grown on said major surface of said crystal substrate, and
- wherein said crystal substrate is a corundum substrate.
An electronic component comprising ax least:
- a crystal substrate having a rhombohedral crystal structure and having as a major surface a plane rotated about a c-axis from a {01{overscore (1)}0} plane over an angle in the range from 10° to 20°;
- and
- at least one layer of a single crystal of a group UT nitride InN, GaN, or AlN or a mixed crystal In1-X-YGaXAlYN (0≦X<1, 0≦Y<1, and 0<X+Y≦1) grown on said crystal substrate, and
- wherein said major surface being a heteroepitaxial growth surface, in which the heteroepiraxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0} plane of said crystal substrate about a c-axis of said crystal substrate over an angle in the range from 8° to 20° in a crystal lattice of said crystal substrate, wherein said crystal substrate is a corundum substrate.
An electronic component comprising at least:
- a crystal substrate having a rhombohedral crystal structure and having as a major surface a plane rotated about ac-axis from a {01{overscore (1)}0} plane over an angle in the range from 13° to 18°;
- and
- at least one layer of a single crystal of a group III nitride InN, GaN, or AlN or a mixed crystal In1-X-YGaXAlYN (0≦X<1, 0≦Y<1, and 0<X+Y≦1) grown on said crystal substrate, and
- wherein said major surface being a heteroepitaxial growth surface, in which the heteroepitaxial growth surface is parallel to a plane obtained by rotating a {01{overscore (1)}0} plane of said crystal substrate about a c-axis of said crystal substrate over an angle in the range from 13° to 18° in a crystal lattice of said crystal substrate, wherein said crystal substrate is a corundum substrate.
Dependencies are inferred from the claim text.