Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMizuki Segawa
Life of this patent
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Abstract
A gate insulating film, a gate electrode, a gate-top protection film, LDD layers and nitride film sidewalls are formed on a semiconductor substrate. Source/drain regions are formed in the semiconductor substrate. After deposition of an interlayer insulating film on the resultant substrate, a hole is formed through the interlayer insulating film and the gate-top protection film to reach the gate electrode, and a gate contact is formed by filling the hole. The gate-top protection film has an opening exposing part of a portion of the area on the top surface of the gate electrode other than the region in contact with the gate contact. This facilitates external diffusion of hydrogen during annealing, or recovery from a fixed level and a damage layer during sintering.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the semiconductor substrate;
- a gate electrode made of a conductive material formed on the gate insulating film;
- a gate-top protection film made of a silicon nitride film formed on the gate electrode;
- source/drain regions formed by implanting impurities in regions of the semiconductor substrate located on both sides of the gate electrode;
- an interlayer insulating film formed on the resultant substrate;
- and
- a gate contact member formed by filling a gate contact hole with a conductive material, the gate contact hole extending through the interlayer insulating film and the gate-top protection film to reach the gate electrode,
- wherein the gate-top protection film has an opening exposing part of a portion of an area located on the top surface of the gate electrode other than the region of the gate contact hole.
Dependencies are inferred from the claim text.