Semiconductor device and method of manufacturing same

Abstract

A semiconductor device includes a semiconductor layer having a main surface (100a), a first region (101) of a first conductivity type, a second region (102) of a second conductivity type, and a third region (103) of the second conductivity type, the first region (101) and the second region (102) having a first boundary (101a) formed therebetween, the first boundary (101a) being perpendicular to the main surface (100a), the third region (103) being formed in the first region (101) in spaced apart relation to the second region (102), the third region (103) having a depth less than the depth of the first boundary (101a) from the main surface (100a); and a control electrode (201) insulated from and overlying the main surface (100a) and extending from the first boundary (101a) to a second boundary (101b) formed between the first region (101) and the third region (103). The semiconductor device improves a tradeoff between breakdown voltage and on-resistance. A method of manufacturing the semiconductor device is also provided.

Dependencies are inferred from the claim text.