High voltage MOS-gated power device
AssigneeSTMicroelectronics S.r.l.
InventorFerruccio Frisina
Life of this patent
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Abstract
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
Claims42
A MOS-gated power device comprising a plurality of functional units, each functional unit comprising:
- a body region of a first conductivity type formed in a semiconductor layer of a single intrinsic semiconductor type and doped to have a second conductivity type;
- a plurality of doped regions of the first conductivity type formed in said semiconductor layer, the plurality of doped regions being disposed under the body region;
- wherein the semiconductor layer is common to the plurality of functional units and further comprises a drain region;
- wherein the drain region is comprised of a plurality of epitaxial layers of a single intrinsic semiconductor type and doped to the second conductivity type;
- and
- wherein a first of the plurality of functional units is separated from a second of the plurality of functional units by portions of said semiconductor layer.
A power MOS transistor structure comprising:
- a semiconductor substrate of a single intrinsic semiconductor type having a first concentration of dopant of a first conductivity type;
- at least one epitaxial layer, each at least one epitaxial layer being of a single intrinsic semiconductor type, on said semiconductor substrate, having a thickness, and having a second concentration of dopant of the first conductivity type, wherein the first concentration of dopant of a first conductivity type is greater than the second concentration of dopant of a first conductivity type;
- a gate oxide layer formed on the at least one epitaxial layer;
- a polysilicon layer formed on said gate oxide layer;
- an insulating material layer formed on said polysilicon layer;
- a plurality of body regions having a first concentration of dopant of a second conductivity type, formed inside said at least one epitaxial layer and formed adjacent to and partially below a surface of said gate oxide layer;
- a plurality of source regions of dopant of said first conductivity type formed inside the plurality of body regions;
- and
- at least one doped region of the second conductivity type formed in the at least one epitaxial layer, beneath each of the plurality of body regions, said at least one doped region extending downwardly substantially for the thickness of said at least one epitaxial layer.
A MOS-gated power device comprising at least one functional unit, the at least one functional unit comprising:
- a body region of a first conductivity type formed in a semiconductor layer of a single intrinsic semiconductor type and doped to have a second conductivity type;
- at least one doped region of a first conductivity type formed in said semiconductor layer, the at least one doped region being disposed under the body region;
- wherein the semiconductor layer further comprises a drain region;
- and
- wherein the drain region is comprised of a plurality of epitaxial layers of a single intrinsic semiconductor type and doped to the second conductivity type.
Dependencies are inferred from the claim text.