Semiconductor device and its manufacture
AssigneesFujitsu Limited, Kabushiki Kaisha Toshiba
InventorsShunji Nakamura, Akiyoshi Hatada, Yoshiaki Fukuzumi
Life of this patent
Estimating the term…
Abstract
A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.
Claims14
A capacitor comprising:
- a substrate having a first area and a second area surrounding said first area;
- an electrode formed above a surface of said substrate in said first area and having a first height;
- an insulating film formed in said second area surrounding the first area, and having a second height larger than said first height;
- a dielectric film formed on said electrode;
- and
- an opposing electrode formed on said dielectric film,
- wherein a shape of a side wall of said insulating film includes a shape reflecting an outer peripheral shape of a side wall of said electrode facing the side wall of said insulating film.
A capacitor comprising:
- a substrate having a first area and a second area surrounding said first area;
- an electrode formed on a surface of said substrate in said first area and having a first height;
- an insulating film formed in said second area surrounding the first area, and having a second height larger than said first height;
- a dielectric film formed above said electrode;
- an opposing electrode formed on said dielectric film;
- and
- a residual portion of said insulating film formed in said first area and having a side wall shape reflecting a side wall shape of said electrode.
A semiconductor device comprising:
- a semiconductor substrate having a first area and a second area surrounding said first area;
- a first insulating film formed above said semiconductor substrate;
- a contact hole formed through said first insulating film in said first area;
- an electrode electrically connected to said semiconductor substrate via said contact hole having a first height;
- a second insulating film formed above said first insulating film in said second area surrounding the first area, and having a second height larger than said first height;
- a dielectric film formed on said electrodes;
- and
- an opposing electrode formed on said dielectric film,
- wherein a shape of a side wall of said second insulating film includes a shape reflecting an outer peripheral shape of a side wall of said electrode facing the side wall of said second insulating film.
A semiconductor device comprising:
- a semiconductor substrate having a first area and a second area surrounding said first area;
- a first insulating film formed above said semiconductor substrate;
- a plurality of contact holes formed through said first insulating film in said first area;
- a plurality of electrodes electrically connected to said semiconductor substrate via said plurality of contact holes and having a first height;
- a second insulating film formed above said first insulating film in said second area surrounding the first area and having a second height larger than said first height;
- a dielectric film formed on said electrodes;
- an opposing electrode formed on said dielectric film;
- and
- a residual portion of said second insulating film formed in said first area and having a side wall shape reflecting a side wall shape of said electrode.
Dependencies are inferred from the claim text.