Semiconductor device and method for manufacturing the same

A semiconductor memory device comprising:

• a semiconductor substrate;
• a first insulator film formed on said substrate;
• a ferroelectric capacitor having a bottom electrode, a ferroelectric turn and a top electrode, which are sequentially stacked on said first insulator film, said ferroeleciric film being patterned on said bottom electrode and including a central portion having a first thickness and a side portion having a second thickness less than the first thickness, the central portion having a top surface area smaller than a top surface area of said bottom electrode;
• a first interlayer insulation layer deposited to cover the ferroelectric capacitor;
• a first hydrogen barrier film deposited on said first interlayer insulation layer so that a top and sides of said ferroelectric capacitor are surrounded by said first hydrogen barrier film and said first interlayer insulation layer, such that said first interlayer insulation layer is disposed between said ferroelectric capacitor and said first hydrogen barrier film, wherein said first hydrogen barrier film is spaced apart from and has no direct contact with hydrogen barrier films of adjacent ferroelectric capacitors;
• a second interlayer insulation layer deposited to cover said first hydrogen barrier film;
• and
• an interconnection layer provided on said second interlayer insulation layer, said interconnection layer being connected to said top electrode via a contact hole provided through said second interlayer insulation layer, said hydrogen barrier film and said first interlayer insulation layer,
• wherein said first hydrogen barrier is made of a material different from either one of said first and second interlayer insulation layers.