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US 6,586,789 B1Granted
Pixel image sensor
OwnerLixin Zhaoinventor
Life of this patent
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Abstract
Pixel image sensors with lateral photodiode elements and vertical overflow drain systems. According to at least one embodiment of the present invention, an image sensor pixel includes a lateral photodiode element and a vertical overflow drain system for draining excessive charges accumulated in the charge collecting region of the lateral photodiode element and for resetting the charge collecting region of the lateral photodiode element.
Claims18
An image sensor pixel, comprising:
- a lateral photodiode element, the lateral photodiode element having a first region of a first conductive type, a third region of a first semiconductive material and a second region of a second conductive type, the third region surrounding laterally the first region, the second region substantially surrounding the third region to substantially enclose the first region, the first semiconductive material having a dopant density substantially lower than a dopant density of the first region and a dopant density of the second region;
- and
- a vertical overflow drain system coupled with the lateral photodiode element, the vertical overflow drain system having a first layer of a second semiconductive material and a second layer, the first layer separating the lateral photodiode element and the second layer, the second semiconductive material having a dopant density substantially lower than an average dopant density of the second layer and the dopant density of the first region.
Dependencies are inferred from the claim text.