Semiconductor device for supplying output voltage according to high power supply voltage

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a p type semiconductor substrate connected to the ground;
• a first MOS transistor formed at said semiconductor substrate having a drain for receiving said high power supply voltage and a source for supplying said output voltage;
• a second MOS transistor formed at said semiconductor substrate having a drain connected to a gate of said first MOS transistor and a source directly connected to the ground;
• an n type conductive region formed on said semiconductor substrate connected to the gate of said first MOS transistor;
• and
• a p type conductive region formed in said n type conductive region connected to the source of said first MOS transistor, wherein
• the n type conductive region, the p type conductive region, and the semiconductor substrate form a base, an emitter and a collector, respectively, of a bipolar transistor, and
• the p type conductive region and n type conductive region form an anode and cathode of a parasitic diode for protecting the gate of the first MOS transistor.

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a semiconductor substrate:
• a first region (IR1) formed at said semiconductor substrate;
• a first MOS transistor formed at said first region having a drain for receiving said high power supply voltage and a source for supplying said output voltage;
• a second region (IR2) formed at said semiconductor substrate being electrically isolated from said first region;
• a pnp bipolar transistor formed at said second region having a base connected to a gate of said first MOS transistor, an emitter connected to the source of said first MOS transistor and a collector connected to the ground;
• and
• a second MOS transistor formed at said second region having a drain connected to the gate of said first MOS transistor and a source connected to the ground, wherein
• said emitter and base of said bipolar transistor form an anode and a cathode of a parasitic diode for protecting the gate of the first MOS transistor.

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a first MOS transistor having a drain for receiving said high power supply voltage and a source for supplying said output voltage:
• a pnp bipolar transistor having a base connected to a gate of said first MOS transistor, an emitter connected to the source of said first MOS transistor and a collector connected to the ground;
• and
• an npn bipolar transistor having a collector connected to the gate of said first MOS transistor and an emitter connected to the ground, wherein
• the emitter and base of the pnp bipolar transistor form an anode and a cathode of a parasitic diode for protecting the gate of the first MOS transistor.

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a semiconductor substrate;
• a first region (IR1) formed at said semiconductor substrate;
• a first MOS transistor formed at said first region having a drain for receiving said high power supply voltage and a source for supplying said output voltage;
• a second region (IR2) formed at said semiconductor substrate being electrically isolated from said first region;
• a pnp bipolar transistor formed at said second region having a base connected to a gate of said first MOS transistor, an emitter connected to the source of said first MOS transistor and a collector connected to the ground;
• and
• an npn bipolar transistor formed at said second region having a collector connected to the gate of said first MOS transistor and an emitter connected to the ground, wherein
• the emitter and base of the pnp bipolar transistor form an anode and a cathode of a parasitic diode for protecting the gate of the first MOS transistor.

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a first MOS transistor having a drain for receiving said high power supply voltage and a source for supplying said output voltage;
• a pnp bipolar transistor having a base connected to a gate of said first MOS transistor and an emitter connected to the source of said first MOS transistor;
• and
• an npn bipolar having a base connected to a collector of said pnp bipolar transistor, a collector connected to the gate of said first MOS transistor and an emitter connected to the ground, wherein
• the emitter and base of the pnp bipolar transistor form an anode and a cathode of a parasitic diode for protecting the gate of the first MOS transistor.

A semiconductor device for supplying a prescribed output voltage according to a high power supply voltage in response to an internally generated signal, comprising:

• a semiconductor substrate;
• a first region (IR1) formed at said semiconductor substrate;
• a first MOS transistor formed at said first region having a drain for receiving said high power supply voltage and a source for supplying said output voltage;
• a second region (IR2) formed at said semiconductor substrate being electrically isolated from said first region;
• a pnp bipolar transistor formed at said second region having a base connected to a gate of said first MOS transistor and an emitter connected to the source of said first MOS transistor;
• and
• an npn bipolar transistor formed at said second region having a base connected to a collector of said pnp bipolar transistor, a collector connected to the gate of said first MOS transistor and an emitter connected to the ground, wherein
• the emitter and base of the pnp bipolar transistor form an anode and a cathode of a parasitic diode for protecting the gate of the first MOS transistor.