Nitride semiconductor light emitting device
AssigneeSharp Kabushiki Kaisha
InventorsTakayuki Yuasa, Atsushi Ogawa, Masahiro Araki, Yoshihiro Ueta, Yuhzoh Tsuda, Mototaka Taneya
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Abstract
The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.
Claims14
A nitride semiconductor light emitting device, comprising:
- a nitride semiconductor substrate;
- and
- a light emitting layered structure including a plurality of nitride semiconductor layers stacked on said nitride semiconductor substrate, wherein
- said nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration that is lower than said first layer region, and
- the bottom of said light emitting layered structure is in direct contact with said first layer region of said substrate.
A nitride semiconductor light emitting device, comprising:
- a nitride semiconductor substrate;
- and
- a plurality of epitaxial growth layers including a light emitting layered structure stacked on said nitride semiconductor substrate, wherein
- said nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration that is lower than said first layer region, and
- the bottom of said epitaxial growth layers including a light emitting layered structure is in direct contact with said first layer region of said substrate.
Dependencies are inferred from the claim text.