Semiconductor light-emitting device

A semiconductor light-emitting device, comprising:

• a first substrate of a first conductivity type;
• a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type;
• a second bonding layer provided on said first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a general formula InxGayP, where 0≦x, y≦1, and x+y=1;
• and
• a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on said second bonding layer, each of said first and second cladding layers having the first and a second conductivity types, and each of said active layer and first and second cladding layers consisting essentially of a material represented by a general formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.