Control of laser machining
AssigneeXsil Technology Limited
InventorsAdrian Boyle, Kali Dunne, Maria Farsari
Life of this patent
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Abstract
A UV laser beam is used to machine semiconductor. The beams intensity (IB) is chosen so that it lies in a range of such values for which there is an increasing (preferably linear) material removal rate for increasing IB An elongate formation such as a trough or a slot is machined in n scans laterally offset (O_centre), for each value of z-integer in the z direction.
Claims29
A method of machining a semiconductor material using a laser beam in which a formation is machined in the material to a width S using a laser beam of intensity IB, and in which the beam is controlled to machine the material with a kerf K,
- characterised in that,
- the beam is controlled to scan n times, n being n≧1 and, where n>1, each subsequent scan is laterally offset and parallel to a preceding scan, and n is ≧S/K.
A laser machining apparatus comprising a laser source, means for directing a laser beam from the source at a semiconductor material to machine with a kerf K to a width S, and a controller for controlling parameters of the laser beam, characterised in that, the controller comprises means for directing the laser beam in a plurality of n parallel passes, said passes being laterally offset, and wherein n is greater than or equal to S/K.
Dependencies are inferred from the claim text.