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US 6,586,348 B2Granted
Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize
AssigneeInfineon Technologies AG
InventorsWalter Hartner, Günther Schindler, Frank Hintermaier, Volker Weinrich
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Abstract
After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.
Claims3
A method of fabricating a patterned metal-oxide-containing layer, which comprises the following method steps:
- providing a substrate;
- applying a substantially amorphous metal-oxide-containing layer to the substrate;
- performing a nucleation process immediately following the applying step, to form crystallization nuclei in the substantially amorphous metal-oxide-containing layer;
- patterning the substantially amorphous metal-oxide-containing layer;
- and
- subsequently thermally treating the metal-oxide-containing layer to form a substantially polycrystalline metal-oxide-containing layer.
3 more elements
Dependencies are inferred from the claim text.