Precursors for zirconium and hafnium oxide thin film deposition
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, David R. Evans
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Abstract
A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.
Claims1
A ZOx precursor, where Z is an element taken from the group of elements consisting of hafnium and zirconium, for use in a chemical vapor deposition process, comprising:
- a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.
Dependencies are inferred from the claim text.