Wafer processing apparatus and wafer processing method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-myeong Lee, Byung-hee Kim, Myoung bum Lee, Ju-young Yun, Gil-heyun Choi
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AssigneeSamsung Electronics Co., Ltd.
InventorsJong-myeong Lee, Byung-hee Kim, Myoung bum Lee, Ju-young Yun, Gil-heyun Choi
Estimating the term…
An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.
A wafer processing method comprising:
A wafer processing method, comprising the steps of:
A wafer processing method comprising:
Dependencies are inferred from the claim text.